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M29F200BB70N6中文资料

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M29F200BB70N6中文资料

March 2007 Rev 51/39

M29F200BT

M29F200BB

2 Mbit (256Kb x8 or 128Kb x16, Boot Block)

Single Supply Flash Memory

Features

■Single 5V±10% supply voltage for Program,

Erase and Read operations

■Access time: 45, 50, 70, 90ns

■Programming time

–8µs per Byte/Word typical

■7 memory blocks

– 1 Boot Block (Top or Bottom location)

– 2 parameter and 4 main blocks

■Program/Erase controller

–Embedded Byte/Word Program algorithm

–Embedded Multi-Block/Chip Erase

algorithm

–Status Register polling and toggle bits

–Ready/Busy output pin

■Erase Suspend and Resume modes

–Read and Program another block during

Erase Suspend

■Unlock Bypass Program command

–Faster Production/Batch Programming

■Temporary Block Unprotection mode

■Low power consumption

–Standby and Automatic Standby

■100,000 Program/Erase cycles per block

■20 years data retention

–Defectivity below 1 ppm/year

■Electronic Signature

–Manufacturer code: 0020h

–Top Device code M29F200BT: 00D3h

–Bottom Device code: M29F200BB: 00D4h

ECOPACK ® packages available

M29F200BB70N6中文资料

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